MOSFET 2N-CH 30V 1A SOT363 DMN3190LDW-7
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Description:
MOSFET 2N-CH 30V 1A SOT363
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
DMN3190LDW-7(FET, MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24424,Price reference "real-time change" China/Hongkong。 DMN3190LDW-7 package/specs, Download DMN3190LDW-7、Datasheet。